june 2007 FDP8442 n-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation fdp8842 rev . a www.fairchildsemi.com 1 FDP8442 n-channel powertrench ? mosfet 40v, 80a, 3.1 m ? features ? typ r ds(on) = 2.3m ? at v gs = 10v, i d = 80a ? typ q g(10) = 181nc at v gs = 10v ? low miller charge ? low q rr body diode ? uis capability (single pulse and repetitive pulse) ? qualified to aec q101 ? rohs compliant applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic steering ? integrated starter / alternator ? distributed power architectures and vrms ? primary switch for 12v systems l e a d f r e e m t a e l n t i o m p e n i
FDP8442 n-channel powertrench ? mosfet fdp8842 rev . a www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain to source breakdown voltage i d = 250 p a, v gs = 0v 40 - - v i dss zero gate voltage drain current v ds = 32v v gs = 0v - - 1 p a t j = 150 c - - 250 i gss gate to source leakage current v gs = r 20v - - r 100 na on characteristics v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 p a 2 2.9 4 v r on ) drain to source on resistance i d = 80a, v gs = 10v - 2.3 3.1 m : i d = 80a, v gs = 10v, t j = 175 c - 3.9 5.3 dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 12200 - pf c oss output capacitance - 1040 - pf c rss reverse transfer capacitance - 640 - pf r g gate resistance v gs = 0.5v, f = 1mhz - 1.0 - : q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v i d = 80a i g = 1ma - 181 235 nc q g(th) threshold gate charge v gs = 0 to 2v - 23 30 nc q gs gate to source gate charge - 49 - nc q gs2 gate charge threshold to plateau - 26 - nc q gd gate to drain ?miller? charge - 41 - nc ds( mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current continuous (t c <158 o c, v gs = 10v) 80 a drain current continuous (t amb = 25 o c, v gs = 10v, with r t ja = 62 o c/w) 23 pulsed see figure 4 e as single pulse avalanche energy (note 1) 720 mj p d power dissipation 254 w derate above 25 o c1.7 w/ o c t j , t stg operating and storage temperature -55 to +175 o c r t jc thermal resistance junction to case 0.59 o c/w r t ja thermal resistance junction to ambient (note 2) 62 o c/w device marking device package reel size tape width quantity FDP8442 FDP8442 to-220ab tube n/a 50 units
FDP8442 n-channel powertrench ? mosfet fdp8842 rev . a www.fairchildsemi.com 3 electrical characteristics t j = 25c unless otherwise noted switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units t (on) turn-on time v dd = 20v, i d = 80a v gs = 10v, r gs = 2 : --62ns t d(on) turn-on delay time - 19.5 - ns t r turn-on rise time - 19.3 - ns t d(off) turn-off delay time - 57 - ns t f turn-off fall time - 17.2 - ns t off turn-off time - - 118 ns v sd source to drain diode voltage i sd = 80a - 0.9 1.25 v i sd = 40a - 0.8 1.0 v t rr reverse recovery time i f = 75a, di/dt = 100a/ p s - 49 64 ns q rr reverse recovery charge i f = 75a, di/dt = 100a/ p s - 70 91 nc notes: 1: starting t j = 25 o c, l = 0.35mh, i as = 64a 2: pulse width = 100s. this product has been designed to meet the extreme test conditio ns and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconductor products ar e manufactured, assembled and tested under iso9000 and qs9000 quality systems certification.
FDP8442 n-channel powertrench ? mosfet fdp8842 rev . a www.fairchildsemi.com 4 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation muliplier t c , case temperature ( o c ) figure 2. 25 50 75 100 125 150 175 0 50 100 150 200 250 300 t c , case temperature ( o c ) i d , drain current (a) v gs = 10v current limited by package maximum continuous drain current vs case temperature figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 transconductance may limit current in this region v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
FDP8442 n-channel powertrench ? mosfet fdp8842 rev . a www.fairchildsemi.com 5 figure 5. 110100 0.1 1 10 100 1000 limited by package 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc 4000 forward bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 500 5000 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2.02.53.03.54.04.55.0 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 012345 0 40 80 120 160 i d , drain current (a) v ds , drain to source voltage (v) v gs = 4v v gs = 10v v gs = 5v v gs = 4.5v pulse duration = 80 p s duty cycle = 0.5% max saturation characteristics figure 9. 45678910 0 10 20 30 40 50 r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t j , junction temperature ( o c ) normalized drain to source on-resistance i d = 80a v gs = 10v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on resistance vs junction temperature typical characteristics
FDP8442 n-channel powertrench ? mosfet fdp8842 rev . a www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 200 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 normalized gate threshold voltage t j , junction temperature ( o c ) v gs = v ds i d = 250 p a normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 t j , junction temperature ( o c ) normalized drain to source breakdown voltage i d = 250 p a figure 13. 0.1 1 10 100 1000 10000 c iss c oss c rss f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage ( v ) 50 40000 capacitance vs drain to source voltage figure 14. 0 50 100 150 200 0 2 4 6 8 10 v dd = 20v v dd = 25v v dd = 15v i d = 80a q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics
fdp8842 rev . a www.fairchildsemi.com 7 FDP8442 n-channel powertrench ? mosfet trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, functio n or design. fairchild does not assu me any liability arising out of the application or use of any product or circuit describe d herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express writte n approval of fairchild semiconductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, c an be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i20
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